Dr. Ganesh Kesavan

Postdoctoral Associate 
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Education
PhD in Chemistry
National Taipei University of Technology, Taiwan

MTech in Nanoscience and Technology
Sri Ramakrishna Engineering College, India

BEng. in Electrical and Electronics Engineering
Dr. Mahalingam College of Engineering and Technology, India

Biography
Dr. Ganesh Kesavan was born and brought up in Tamil Nadu, India. He was awarded PhD degree in the year 2021 and his thesis focused on effect of non-metal dopants in graphitic carbon nitride for electrochemical sensing. He also carried out numerous research on the synthesis of nanomaterials, functionalization, and modification of aluminosilicate clay catalysts for the development of various electrochemical sensors. Prior to his doctoral studies, Ganesh spends 18 months as a post graduate trainee and research associate in International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), an Autonomous Research and Development Centre of Department of Science and Technology (DST), Government of India. He joined under Dr. Alexander Star as Postdoctoral Associate in the Fall 2021. Beyond his research life, Ganesh likes reading, collecting articles about aviation, space, and astronomy. 

Research
Developing van der Waals heterostructure and holey graphene.